发明名称 |
NONVOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION |
摘要 |
A method of programming selected memory cells to a plurality of target states comprises applying a first verification voltage to the selected memory cells to perform a verification read operation on memory cells programmed to at least one target state, applying a program voltage to the selected memory cells, and applying a second verification voltage lower than the first verification voltage to the selected memory cells to perform a verification read operation on memory cells programmed to the at least one target state, wherein the second verification voltage is provided in a specified program loop and subsequent program loops. The second verification voltage is set such that a number of slow bits in the at least one target state is different from the number of slow bits in another target state. |
申请公布号 |
US2013336057(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201313767166 |
申请日期 |
2013.02.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG KI HO;PARK SANG-SOO;KIM JI-SUK;CHO DOO-HO |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|