发明名称 ION BEAM DEVICE AND MACHINING METHOD
摘要 Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.
申请公布号 US2013334034(A1) 申请公布日期 2013.12.19
申请号 US201214002137 申请日期 2012.01.13
申请人 KITAYAMA SHINYA;TOMIMATSU SATOSHI;ONISHI TSUYOSHI;HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 KITAYAMA SHINYA;TOMIMATSU SATOSHI;ONISHI TSUYOSHI
分类号 H01J37/317 主分类号 H01J37/317
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