发明名称 A CAPACITIVE STRUCTURE
摘要 <p>The invention relates to a capacitive structure comprising: first and second components, at least one component comprising a plurality of capacitive layers of a dielectric, each layer arranged between electrodes of different polarity, wherein the first and second components are arranged in a stack separated by a stress reducing layer (18) having a supporting structure with an open mesh in which air acts to reduce the transmissibility of cracks through the stress reducing layer.</p>
申请公布号 WO2013186172(A1) 申请公布日期 2013.12.19
申请号 WO2013EP61918 申请日期 2013.06.10
申请人 SYFER TECHNOLOGY LIMITED 发明人 ELLMORE, ANGIE;ELLIS, MATTHEW
分类号 H01G4/30;H01G4/38 主分类号 H01G4/30
代理机构 代理人
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