发明名称 SUBSTRATE SUPPORT MEDIUM AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate support medium which inhibits influences on an atmosphere gas around a substrate and achieves long life, and to provide a semiconductor manufacturing apparatus.SOLUTION: A substrate support medium according to this invention supports a substrate when a film is deposited on a surface of the substrate by a chemical vapor deposition method. The substrate support body includes: a graphite material having a recessed part for housing the substrate; a multilayer film formed in the recessed part by overlapping a first sublimation prevention film formed by TaC or HfC on a first degasification prevention film formed by SiC; and a second degasification prevention film formed by SiC in a portion of the graphite material which excludes the recessed part.
申请公布号 JP2013254853(A) 申请公布日期 2013.12.19
申请号 JP20120129717 申请日期 2012.06.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 ONO AKIHITO;KAWATSU YOSHIHEI
分类号 H01L21/205;C23C16/458;H01L21/683 主分类号 H01L21/205
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