发明名称 |
SUBSTRATE SUPPORT MEDIUM AND SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate support medium which inhibits influences on an atmosphere gas around a substrate and achieves long life, and to provide a semiconductor manufacturing apparatus.SOLUTION: A substrate support medium according to this invention supports a substrate when a film is deposited on a surface of the substrate by a chemical vapor deposition method. The substrate support body includes: a graphite material having a recessed part for housing the substrate; a multilayer film formed in the recessed part by overlapping a first sublimation prevention film formed by TaC or HfC on a first degasification prevention film formed by SiC; and a second degasification prevention film formed by SiC in a portion of the graphite material which excludes the recessed part. |
申请公布号 |
JP2013254853(A) |
申请公布日期 |
2013.12.19 |
申请号 |
JP20120129717 |
申请日期 |
2012.06.07 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
ONO AKIHITO;KAWATSU YOSHIHEI |
分类号 |
H01L21/205;C23C16/458;H01L21/683 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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