发明名称 SEMICONDUCTOR DEVICE MANUFACTURING PROCESS AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY
摘要 PROBLEM TO BE SOLVED: To prevent a substrate from being inhibited to be separated from a semiconductor layer due to an adhesive material layer sticking to a side surface of the substrate when adhering the semiconductor layer to a support substrate other than the substrate, in preprocessing of a step of separating at an interface the substrate and the semiconductor layer formed thereon.SOLUTION: In preprocessing of a step of separating a substrate 11 and a semiconductor layer 12 by irradiating an interface of the substrate 11 and the semiconductor layer 12 formed thereon with electromagnetic radiation, the following steps are performed when adhering the semiconductor layer 12 to a support substrate 13 other than the substrate 11, the steps including: forming a protective layer 16 on side surfaces of the substrate 11 and the semiconductor layer 12; adhering the semiconductor layer 12 having the protective layer 16 formed thereon to an adhesive material layer 14 on the support substrate 13; and removing the protective layer 16 from the semiconductor layer 12 adhered on the adhesive material layer 14 and from the substrate 11.
申请公布号 JP2013254814(A) 申请公布日期 2013.12.19
申请号 JP20120128744 申请日期 2012.06.06
申请人 SHARP CORP 发明人 OTA MASATAKA;HIRUKAWA SHUICHI
分类号 H01L33/32;H01L33/60 主分类号 H01L33/32
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