METHOD FOR FORMING WIRING, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide: a wiring which is formed using a conductive film containing copper and whose shape is controlled; a transistor including an electrode which is formed in the same layer as the wiring; and a semiconductor device including the transistor and the wiring.SOLUTION: For a laminated film comprising a first conductive film containing copper and a second conductive film over the first conductive film: a resist mask is formed over the second conductive film; part of the second conductive film and part of the first conductive film are removed by using the resist mask as a mask so as to form the first conductive film with a taper angle in the range from 15° to 45° inclusive; and then the resist mask is removed.