| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, which is manufactured using an SOI substrate, that has improved reliability by preventing failure due to an end portion of a silicon layer provided in an island shape.SOLUTION: A semiconductor device has a structure including an SOI substrate in which an insulating layer and an island-shaped silicon layer are sequentially stacked on a supporting substrate, a gate insulating layer provided on one surface and side surfaces of the island-shaped silicon layer, and a gate electrode provided on the island-shaped silicon layer via the gate insulating layer. In the gate insulating layer, the permittivity of the region in contact with the side surfaces of the island-shaped silicon layer is set to be smaller compared to the permittivity of the region on the one surface of the island-shaped silicon layer. |
