| 摘要 |
PROBLEM TO BE SOLVED: To enable forming bit contacts accurately and stably even if miniaturization proceeds.SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming, on a semiconductor substrate, a first nitride film having a first opening pattern corresponding to a buried-word-line groove; forming the buried-word-line groove by etching the semiconductor substrate using the first nitride film as a mask; forming a word line in the buried-word-line groove; forming a second nitride film so as to cover the word line and the first nitride film; and forming a bit-contact interlayer film composed of the first nitride film and the second nitride film by smoothing a surface of the second nitride film. |
