发明名称 |
FinFET with High Mobility and Strain Channel |
摘要 |
An integrated circuit device includes a fin at least partially embedded in a shallow trench isolation (STI) region and extending between a source and a drain. The fin is formed from a first semiconductor material and having a trimmed portion between first and second end portions. A cap layer, which is formed from a second semiconductor material, is disposed over the trimmed portion of the fin to form a high mobility channel. A gate electrode structure is formed over the high mobility channel and between the first and second end portions. |
申请公布号 |
US2013334606(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201213525050 |
申请日期 |
2012.06.15 |
申请人 |
SHEN CHUN-LIANG;TSAI KUO-CHING;LI HOU-JU;LIANG CHUN-SHENG;LAI KAO-TING;TING KUO-CHIANG;WU CHI-HSI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SHEN CHUN-LIANG;TSAI KUO-CHING;LI HOU-JU;LIANG CHUN-SHENG;LAI KAO-TING;TING KUO-CHIANG;WU CHI-HSI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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