Method for manufacturing semiconductor device, involves etching gate dielectric layer, barrier layer, and metal layer to respective level within trench to form opening or to trench for forming further layers

摘要

The method involves providing semiconductor substrate (202) on which a trench is located. Gate dielectric layer (402) and metal layer (602) formed on the substrate are etched to form respective etched layer. A barrier layer (502) is formed between the gate dielectric layer and metal layer. The gate dielectric layer, barrier layer, and metal layer are etched to respective level within the trench in corresponding order to form V-shaped opening or V-shaped entrance to trench for forming further layers.