SiC SINGLE CRYSTAL INGOT, SiC SINGLE CRYSTAL, AND PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide: an ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for such an SiC single crystal.SOLUTION: In an SiC single crystal ingot of an SiC single crystal 30 containing a seed crystal 14 and a grown crystal grown by a solution method in which the seed crystal is the base point, the grown crystal contains a nitrogen density gradient layer 32 having a nitrogen content increasing toward the direction of growth from the base point of the seed crystal. The grown crystal may further include a nitrogen density constant layer 34 having a substantially constant nitrogen density at a growth surface side adjacent to the nitrogen density gradient layer 32.