| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high breakdown voltage isolation structure of RESURF structure, in which a displacement current generated by a dV/dt noise can be reduced, and to provide a manufacturing method therefor.SOLUTION: Since a p-type diffusion layer 3 of outermost surface constituting a double RESURF structure is formed by adjoining a high concentration region 3b having a deep diffusion depth and a low concentration region 3a having a shallow diffusion depth alternately, the lateral resistance can be increased without changing the total charge amount of the p-type diffusion layer 3 of outermost surface. As a result, a displacement current generated by a dV/dt noise can be reduced. |
