| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor thin film which is manufactured at comparatively low temperature, can be formed even on a bendable resin substrate, has low carrier density and high Hall mobility, and further has large energy bandgap; and to provide a method for manufacturing the semiconductor thin film, and a thin film transistor using the semiconductor thin film, which has high field-effect mobility, high on-off ratio and improved element characteristics achieved by reducing an influence of irradiated light due to generation of leakage current or the like.SOLUTION: An amorphous film containing zinc oxide and tin oxide is so formed as to have specific resistance of 10-10&OHgr;cm, and then oxidation treatment is performed to form a transparent semiconductor thin film 40. |
