| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the reliability is improved by preventing failure due to an end portion of a semiconductor layer provided in an island shape, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device has a structure including an island-shaped semiconductor layer provided on a substrate, an insulating layer provided on one surface and side surfaces of the island-shaped semiconductor layer, and a gate electrode provided on the island-shaped semiconductor layer via the insulating layer. In the insulating layer provided in contact with the island-shaped semiconductor layer, the permittivity of the region in contact with the side surfaces of the island-shaped semiconductor layer is set to be small compared to the region on the one surface of the island-shaped semiconductor layer. |
