发明名称 |
Semiconductor Structure and Method |
摘要 |
A system and method for providing support to semiconductor wafer is provided. An embodiment comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur. |
申请公布号 |
US2013337631(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201213525041 |
申请日期 |
2012.06.15 |
申请人 |
SYUE SEN-HONG;CHEN PU-FANG;WANG SHIANG-BAU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SYUE SEN-HONG;CHEN PU-FANG;WANG SHIANG-BAU |
分类号 |
H01L21/762;C30B15/04 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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