发明名称 |
NON-RELAXED EMBEDDED STRESSORS WITH SOLID SOURCE EXTENSION REGIONS IN CMOS DEVICES |
摘要 |
A method of forming a field effect transistor (FET) device includes forming a patterned gate structure over a substrate; forming a solid source dopant material on the substrate, adjacent sidewall spacers of the gate structure; performing an anneal process at a temperature sufficient to cause dopants from the solid source dopant material to diffuse within the substrate beneath the gate structure and form source/drain extension regions; following formation of the source/drain extension regions, forming trenches in the substrate adjacent the sidewall spacers, corresponding to source/drain regions; and forming an embedded semiconductor material in the trenches so as to provide a stress on a channel region of the substrate defined beneath the gate structure. |
申请公布号 |
US2013337621(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201313970874 |
申请日期 |
2013.08.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KERBER PRANITA;KHAKIFIROOZ ALI;LA TULIPE, JR. DOUGLAS C. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|