发明名称 MULTIBIT MEMORY WITH READ VOLTAGE QUALIFICATION AT STARTUP
摘要 Systems in which multi-bit PCM is used, including memory systems, as well as methods for operating such systems. A test of multi-bit PCM memory elements with known states can be used to determine whether immediately available voltage levels can reliably read multi-bit PCM. This can be used to accelerate availability of memory states residing in multi-bit PCM with respect to, for example, redundancy address storage, other startup state information, and parameters for which nonvolatile storage is useful.
申请公布号 US2013336051(A1) 申请公布日期 2013.12.19
申请号 US201313869486 申请日期 2013.04.24
申请人 BEING ADVANCED MEMORY CORPORATION;BEING ADVANCED MEMORY CORPORATION 发明人 JURASEK RYAN;WILLEY AARON D.
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利