发明名称 THRESHOLD VOLTAGE PROGRAMMING OF AN ION SENSITIVE FIELD EFFECT TRANSISTOR
摘要 <p>A device and method for threshold voltage programming of an Ion Sensitive Field Effect Transistor (ISFET). This is of particular use in matching ISFETs in an array, which may be used in biological reaction monitoring. A circuit comprises an Ion Sensitive Field Effect Transistor (ISFET) having a floating gate (111) and two tunnelling inputs (Vt-, 148,149; Vt+, 145, 146) coupled by capacitors (Ct-, Ct+) to the floating gate for bidirectional electron tunnelling to program a charge on the floating gate.</p>
申请公布号 WO2013186537(A1) 申请公布日期 2013.12.19
申请号 WO2013GB51499 申请日期 2013.06.07
申请人 DNA ELECTRONICS LTD 发明人 TOUMAZOU, CHRISTOFER;ALAHDAL, ABDULRAHMAN
分类号 G11C16/04;G01N27/414 主分类号 G11C16/04
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