| 摘要 |
A light emitting device according to an embodiment includes: a light emitting structure which includes a first conductive semiconductor layer, an active layer which is formed under the first conductive semiconductor layer, and a second conductive semiconductor layer which is formed under the active layer; a reflective electrode which is arranged under the light emitting structure; and an electrode which is formed on the first conductive semiconductor layer and is composed of a conductive ion implantation layer. |
