SILICON NITRIDE FILM FOR SEMICONDUCTOR ELEMENT, AND METHOD AND APPARATUS FOR MANUFACTURING SILICON NITRIDE FILM

摘要

Disclosed is a silicon nitride film for a semiconductor element, wherein changes of film stress of the silicon nitride film are suppressed, said silicon nitride film being formed by applying bias power. Also disclosed are a method and an apparatus for manufacturing the silicon nitride film. The silicon nitride film, which is formed on a substrate (19) by plasma processing, and which is to be used in the semiconductor element, has a structure wherein a biased SiN film (31) formed by applying bias to the substrate (19) is sandwiched between an unbiased SiN film (32a) and an unbiased SiN film (32b), which are formed by not applying bias to the substrate (19).