<p>A method for forming a semiconductor device includes forming a recess in a source region and a recess in a drain region of the semiconductor device. The method further includes forming a first semiconductor material layer in the recess in the source region and a second semiconductor material layer in the recess in the drain region, wherein each of the first semiconductor material layer and the second semiconductor material layer are formed using a stressor material having a first ratio of an atomic concentration of a first element and an atomic concentration of a second element, wherein the first element is silicon and a first level of concentration of a doping material. The method further includes forming additional semiconductor material layers overlying the first semiconductor material layer and the second semiconductor material layer that have a different ratio of the atomic concentration of the first element and the second element.</p>
申请公布号
EP2113130(B1)
申请公布日期
2013.12.18
申请号
EP20080713946
申请日期
2008.01.24
申请人
FREESCALE SEMICONDUCTOR, INC.
发明人
ZHANG, DA;DHANDAPANI, VEERARAGHAVAN;GOEDEKE, DARREN V.;HILDRETH, JILL C.