| 摘要 |
The present invention relates to an apparatus and method for processing a substrate by using plasma. The apparatus for processing the substrate includes a chamber which provides a processing space, a support unit which includes a dielectric plate which supports the substrate in the chamber, a gas supply unit which supplies processing gas for performing a process to the substrate, a plasma source which generates the plasma from the processing gas, and a ring assembly which is arranged to surround the support unit. The ring assembly includes a first ring and a first ring driver which vertically moves the first ring between a first top etch position and a first bevel etch position. The first top etch position is a height to locate the upper side of the first ring to be higher than the substrate. The first bevel etch position is a height to locate the upper side of the first ring to be lower than the substrate. Thereby, provided are an apparatus and method capable of performing the top etch and the bevel etch of the substrate in one apparatus. |
