| 摘要 |
A build-up chip package (10, 66) includes a first die (26, 68) with an active surface (28, 74) having at least one die pad (32, 72) positioned thereon; a first adhesive layer (30, 90) having a first surface (34) coupled to the active surface (28, 74) of the first die (26, 68) and a second surface (36) opposite the first surface (34); and a first dielectric layer (12, 80) having a top surface (14, 88). A first portion (38) of the top surface (14, 88) of the first dielectric layer (12, 80) is coupled to the second surface (36) of the first adhesive layer (30, 90). A second portion (40, 42) of the top surface (14, 88) of the first dielectric layer (12, 80), distinct from the first portion (38), is substantially free of adhesive. A plurality of metallised interconnections (52, 84) are formed in vias (44, 82) formed through the first dielectric layer (12, 80) and in contact with at least one of a metallisation path (18, 86) coupled to the top surface (14, 88) of the first dielectric layer (12, 80) and the at least one die pad (32, 72). The build-up chip package (66) may also include a second die (70) comprising an active surface (76) having at least one die pad (72) positioned thereon, a second adhesive layer (92) having a first surface coupled to the active surface (76) of the second die (70) and a second surface opposite the first surface coupled to a third portion of the top surface (88) of the first dielectric layer (80). |
