| 摘要 |
<p>A light emitting diode 201 comprising device layers 210, 215, 220 (fig 2a) on semiconductor wafer substrate 205 has a protective layer 225 preferably comprising indium-tin oxide, zinc oxide or titanium oxide that may be less than 50nm and more preferably 20nm thick. This layer protects subsequent processing steps which may include forming a mask layer or layers 230, 235 removing the mask layer, or etching filling materials provided over the selectively etched semiconductor wafer. The mask may comprise a first silicon dioxide or nitride layer 230 and a metal llayer 253, such as nickel that is annealed on the first layer. The device layers are preferable etched to form nano-scale nano-rods or nano-pillars 202 which may be treated ( cured ) with hot nitric acid on surface 202a before a filling layer is applied (240 fig 3) and then etched back to allow a contact layer (245) and pads (250, 255) to be formed.</p> |
