发明名称
摘要 PROBLEM TO BE SOLVED: To provide a new method for analyzing a crystal structure, can identify a peak spread attributable to a twist distribution even when a crystal quality of a measurement sample deteriorates considerably and the peak spread attributable to the twist distribution expands greatly. SOLUTION: The method includes the steps of obtaining an hkl reflection profile in which an axis of abscissas represents a scan angle Δθ and an axis of ordinates represents an X-ray intensity, by performing an X-ray diffraction measurement, using an ω scan mode which fixes a position of an X-ray photodetector 12 and rotates only a sample 14; and determines whether a peak spread profile is attributable to a local twist distribution resulting from crystal mosaicity, by applying a re-standardization process, a profile analytical process, and a determination process to the obtained hkl reflection profile. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP5373660(B2) 申请公布日期 2013.12.18
申请号 JP20100034221 申请日期 2010.02.19
申请人 发明人
分类号 G01N23/207 主分类号 G01N23/207
代理机构 代理人
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