A METHOD FOR HIGH VOLUME E-BEAM LITHOGRAPHY

摘要

The present invention relates to a method for forming a pattern with e-beam lithography. The method includes receiving integrated circuit (IC) design layout data including polygon and prohibition patterns; modifying the prohibition patterns and the polygon by using EPC technology; striping the modified polygon as sub fields; converting the striped polygon into an e-beam recorder format data; and recording the polygon of the e-beam recorder format data in a substrate. Striping the modified polygon includes finding a prohibition pattern modified as a reference layer and stitching the polygon by avoiding stitching the modified prohibition pattern. [Reference numerals] (202) Receive IC design layout data;(204) Perform EPC (Electron Proximity Correction);(206) Stripe EPC-modified IC design data;(208) Execute an e-beam data process;(210) Record in a substrate regarding an e-beam recorder