| 摘要 |
<p>A method for producing a semiconductor device includes forming an electrically conductive pattern so as to overlap in a plan view with part of a semiconductor layer provided on a substrate, on the opposite side of the substrate side of the semiconductor layer; implanting an impurity into the semiconductor layer using the electrically conductive pattern as a mask; reducing a superimposed region that is a region where the electrically conductive pattern and the semiconductor layer overlap with each other in a plan view by removing part of the electrically conductive pattern after the implantation of the impurity; and implanting the impurity into the semiconductor layer using the electrically conductive pattern as a mask after the reduction of the superimposed region.</p> |
