发明名称 |
Semiconductor device manufacturing method and laser annealing apparatus |
摘要 |
A semiconductor device manufacturing method and a laser annealing apparatus are provided which can realize annealing with high quality. A semiconductor substrate includes an amorphous high-concentration layer and a low-concentration layer which is disposed deeper than the high-concentration layer. Dopant concentration of the low-concentration layer is lower than that of the high-concentration layer. Dopants in the high-concentration layer are activated by a first laser pulse. Dopants in the low-concentration layer are activated by a second laser pulse which has a higher peak power than the first laser pulse and has a shorter pulse width than the first laser pulse. Accordingly, dopants in the high-concentration layer and the low-concentration layer are activated without an increase in surface roughness. |
申请公布号 |
EP2674968(A2) |
申请公布日期 |
2013.12.18 |
申请号 |
EP20130020036 |
申请日期 |
2013.06.12 |
申请人 |
SUMITOMO HEAVY INDUSTRIES, LTD. |
发明人 |
SAKURAGI, SUSUMU;WAKABAYASHI, NAOKI |
分类号 |
H01L21/268;B23K26/06;H01L21/331 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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