| 摘要 |
<p>The present invention is to provide a cell string of a nonvolatile memory applied to a nerve imitation technology and a memory array using the same. The present invention increases a degree of integration by separating a fence-type semiconductor into two fins and forming a memory cell string with a memory cell of a gate diode structure in each fin, and basically prevents the interference between adjacent cells. By forming the memory cell string on a first semiconductor layer surrounded by a gate electrode and a depletion region of a PN junction, a GSL and a CSL required for an existing NAND flash memory array are removed by an memory operation due to a GIDL, and the degree of integration is greatly increased.</p> |
