发明名称 |
MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION |
摘要 |
<p>An apparatus includes a structure that includes a bottom cap layer surrounding a metal pad. The apparatus also includes a magnetic tunnel junction (MTJ) device that includes a bottom electrode coupled to the structure. The MTJ device includes magnetic tunnel junction layers, a top electrode, and a logic cap layer. The MTJ device is offset with respect to the metal pad.</p> |
申请公布号 |
EP2430661(B1) |
申请公布日期 |
2013.12.18 |
申请号 |
EP20100720328 |
申请日期 |
2010.05.14 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
LI, XIA;KANG, SEUNG H.;ZHU, XIAOCHUN |
分类号 |
H01L27/22;G11C11/15;H01L43/12 |
主分类号 |
H01L27/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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