发明名称 MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION
摘要 <p>An apparatus includes a structure that includes a bottom cap layer surrounding a metal pad. The apparatus also includes a magnetic tunnel junction (MTJ) device that includes a bottom electrode coupled to the structure. The MTJ device includes magnetic tunnel junction layers, a top electrode, and a logic cap layer. The MTJ device is offset with respect to the metal pad.</p>
申请公布号 EP2430661(B1) 申请公布日期 2013.12.18
申请号 EP20100720328 申请日期 2010.05.14
申请人 QUALCOMM INCORPORATED 发明人 LI, XIA;KANG, SEUNG H.;ZHU, XIAOCHUN
分类号 H01L27/22;G11C11/15;H01L43/12 主分类号 H01L27/22
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