| 摘要 |
The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCI gas at a temperature between 250° and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCI gas, containing between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper, the remaining except for normal impurities being silicon. |
