发明名称 |
Preventing UBM oxidation in bump formation processes |
摘要 |
A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer. |
申请公布号 |
US8609526(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US20100842617 |
申请日期 |
2010.07.23 |
申请人 |
LIU CHUNG-SHI;LIN CHENG-CHUNG;HO MING-CHE;LIN KUO CHENG;CHOU MENG-WEI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU CHUNG-SHI;LIN CHENG-CHUNG;HO MING-CHE;LIN KUO CHENG;CHOU MENG-WEI |
分类号 |
H01L21/445;H01L21/4757 |
主分类号 |
H01L21/445 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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