发明名称 Device and method for detecting resistive defect
摘要 The invention provides a device and method for detecting a resistive defect in a static random access memory (SRAM) device. A first aspect of the invention provides a static random access memory (SRAM) device comprising: a bitline; a wordline; a bitline precharge circuit electrically connected to the bitline and adapted to provide to the bitline a first precharge voltage for precharging the bitline during normal operation of the SRAM device and a second precharge voltage less than the first precharge voltage for testing the SRAM device for a resistive defect between the bitline and the wordline.
申请公布号 US8611164(B2) 申请公布日期 2013.12.17
申请号 US201113195114 申请日期 2011.08.01
申请人 BRACERAS GEORGE MARIA;PILO HAROLD;RUDGERS GEORGE E.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BRACERAS GEORGE MARIA;PILO HAROLD;RUDGERS GEORGE E.
分类号 G11C29/00;G11C7/12 主分类号 G11C29/00
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