发明名称 |
Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
摘要 |
The invention relates to a method and apparatus providing a memory cell array in which each resistance memory cell is connected in series to a capacitive element. Access transistors are not necessary to perform read and write operations on the memory cell. In one exemplary embodiment, the capacitive element is a capacitor. |
申请公布号 |
US8611136(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US201213467563 |
申请日期 |
2012.05.09 |
申请人 |
HUSH GLEN;MICRON TECHNOLOGY, INC. |
发明人 |
HUSH GLEN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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