发明名称 |
Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor device |
摘要 |
According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device. |
申请公布号 |
US8611131(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US201113307672 |
申请日期 |
2011.11.30 |
申请人 |
CHANG MAN;KIM YOUNG-BAE;KIM CHANG-JUNG;LEE MYOUNG-JAE;PARK SEONG-JUN;HUR JI-HYUN;LEE DONG-SOO;LEE CHANG-BUM;LEE SEUNG-RYUL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHANG MAN;KIM YOUNG-BAE;KIM CHANG-JUNG;LEE MYOUNG-JAE;PARK SEONG-JUN;HUR JI-HYUN;LEE DONG-SOO;LEE CHANG-BUM;LEE SEUNG-RYUL |
分类号 |
G11C11/00;G11C11/36 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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