发明名称 |
Self-body biasing sensing circuit for resistance-based memories |
摘要 |
A resistance based memory sensing circuit has reference current transistors feeding a reference node and a read current transistor feeding a sense node, each transistor has a substrate body at a regular substrate voltage during a stand-by mode and biased during a sensing mode at a body bias voltage lower than the regular substrate voltage. In one option the body bias voltage is determined by a reference voltage on the reference node. The substrate body at the regular substrate voltage causes the transistors to have a regular threshold voltage, and the substrate body at the body bias voltage causes the transistors to have a sense mode threshold voltage, lower than the regular threshold voltage. |
申请公布号 |
US8611132(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US201213346029 |
申请日期 |
2012.01.09 |
申请人 |
JUNG SEONG-OOK;KIM JISU;JUNG YOUNGDON;KIM JUNG PILL;KANG SEUNG H.;QUALCOMM INCORPORATED;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
JUNG SEONG-OOK;KIM JISU;JUNG YOUNGDON;KIM JUNG PILL;KANG SEUNG H. |
分类号 |
G11C11/00;G11C13/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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