发明名称 P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indium
摘要 A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.
申请公布号 US8609981(B2) 申请公布日期 2013.12.17
申请号 US201113104744 申请日期 2011.05.10
申请人 CHEN HAN-YI;CHEN CHIA-HSIANG;SU HUAN-CHIEH;LIU KUO-LIANG;YEW TRI-RUNG;NATIONAL TSING HUA UNIVERSITY 发明人 CHEN HAN-YI;CHEN CHIA-HSIANG;SU HUAN-CHIEH;LIU KUO-LIANG;YEW TRI-RUNG
分类号 H01L31/00;H01B1/02;H01B1/08 主分类号 H01L31/00
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