发明名称 |
Semiconductor package having through electrodes that reduce leakage current and method for manufacturing the same |
摘要 |
A stacked semiconductor package having through electrodes that exhibit a reduced leakage current and a method of making the same are presented. The stacked semiconductor package includes a semiconductor chip, through-holes, and a current leakage prevention layer. The semiconductor chip has opposing first and second surfaces. The through-holes pass entirely through the semiconductor chip and are exposed at the first and second surfaces. A polarized part is formed on at least one of the first and second surfaces of the semiconductor chip. The through-electrodes are disposed within the through-holes. The current leakage prevention layer covers the polarized part and exposes ends of the through-electrodes. |
申请公布号 |
US8609535(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US201113286376 |
申请日期 |
2011.11.01 |
申请人 |
JO SEUNG HEE;KIM SUNG CHEOL;KIM SUNG MIN;HYNIX SEMICONDUCTOR INC. |
发明人 |
JO SEUNG HEE;KIM SUNG CHEOL;KIM SUNG MIN |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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