| 摘要 |
An example control element for use in a power supply includes a high-voltage transistor and a control circuit to control switching of the high-voltage transistor. The high-voltage transistor includes a drain region, source region, tap region, drift region, and tap drift region, all of a first conductivity type. The transistor also includes a body region of a second conductivity type. An insulated gate is included in the transistor such that when the insulated gate is biased a channel is formed across the body region to form a conduction path between the source region and the drift region. A voltage at the tap region with respect to the source region is substantially constant and less than a voltage at the drain region with respect to the source region in response to the voltage at the drain region exceeding a pinch off voltage. |
