| 摘要 |
There is provided a method of measuring a leakage current or a dielectric breakdown voltage of a semiconductor wafer that has a base wafer and a buffer layer formed on the base wafer. The method includes providing, on the buffer layer, a plurality of electrodes including a hole injection electrode made of a material that injects a hole into the buffer layer when an electric field is applied thereto, measuring an electric current flowing through a pair of electrodes or a voltage between the electrodes when a voltage or an electric current is applied to the pair of electrodes, the electrodes including at least one hole injection electrode, and measuring a leakage current or a dielectric breakdown voltage caused by hole migration in the semiconductor wafer based on the current flowing through the pair of electrodes or the voltage generated between the pair of the electrodes. |
