发明名称 |
Methods of forming efuse devices |
摘要 |
A semiconductor-based electronic fuse may be provided in a sophisticated semiconductor device having a bulk configuration by appropriately embedding the electronic fuse into a semiconductor material of reduced heat conductivity. For example, a silicon/germanium fuse region may be provided in the silicon base material. Consequently, sophisticated gate electrode structures may be formed on the basis of replacement gate approaches on bulk devices substantially without affecting the electronic characteristics of the electronic fuses. |
申请公布号 |
US8609485(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US20100941185 |
申请日期 |
2010.11.08 |
申请人 |
KURZ ANDREAS;WEI ANDY;SCHWAN CHRISTOPH;GLOBALFOUNDRIES INC. |
发明人 |
KURZ ANDREAS;WEI ANDY;SCHWAN CHRISTOPH |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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