发明名称 |
Copper alloy bonding wire for semiconductor device |
摘要 |
The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm. |
申请公布号 |
US8610291(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US20070848403 |
申请日期 |
2007.08.31 |
申请人 |
UNO TOMOHIRO;KIMURA KEIICHI;YAMADA TAKASHI;NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.;NIPPON MICROMETAL CORPORATION |
发明人 |
UNO TOMOHIRO;KIMURA KEIICHI;YAMADA TAKASHI |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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