发明名称 Method for producing graphene oxide with tunable gap
摘要 A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.
申请公布号 US8609458(B2) 申请公布日期 2013.12.17
申请号 US201113316771 申请日期 2011.12.12
申请人 GHARIB MORTEZA;ARIA ADRIANUS INDRAT;GANI ADI WIJAYA;CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 GHARIB MORTEZA;ARIA ADRIANUS INDRAT;GANI ADI WIJAYA
分类号 H01L51/40;H01L29/08 主分类号 H01L51/40
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