发明名称 |
Gate-all-around carbon nanotube transistor with selectively doped spacers |
摘要 |
A method of fabricating a semiconducting device is disclosed. A carbon nanotube is formed on a substrate. A portion of the substrate is removed to form a recess below a section of the carbon nanotube. A doped material is applied in the recess to fabricate the semiconducting device. The recess may be between one or more contacts formed on the substrate separated by a gap. |
申请公布号 |
US8609481(B1) |
申请公布日期 |
2013.12.17 |
申请号 |
US201213705920 |
申请日期 |
2012.12.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FRANKLIN AARON D.;KOSWATTA SIYURANGA O.;SMITH JOSHUA T. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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