发明名称 |
Pulsed bias plasma process to control microloading |
摘要 |
A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas. |
申请公布号 |
US8609546(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US20080744588 |
申请日期 |
2008.11.18 |
申请人 |
LEE WONCHUL;FU QIAN;LIU SHENJIAN;PU BRYAN;LAM RESEARCH CORPORATION |
发明人 |
LEE WONCHUL;FU QIAN;LIU SHENJIAN;PU BRYAN |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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