发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device includes the steps of: preparing a combined wafer; obtaining a first intermediate wafer by forming an active layer; obtaining a second intermediate wafer by forming a front-side electrode on the first intermediate wafer; supporting the second intermediate wafer by adhering an adhesive tape at the front-side electrode side; removing the supporting layer while supporting the second intermediate wafer using the adhesive tape; forming a backside electrode on the main surfaces of SiC substrates exposed by the removal of the supporting layer; adhering an adhesive tape at the backside electrode side and removing the adhesive tape at the front-side electrode side so as to support the plurality of SiC substrates using the adhesive tape; and obtaining a plurality of semiconductor devices by cutting the SiC substrates with the SiC substrates being supported by the adhesive tape provided at the backside electrode side. |
申请公布号 |
US8609513(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US201113510570 |
申请日期 |
2011.07.21 |
申请人 |
HORII TAKU;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HORII TAKU |
分类号 |
H01L21/78;H01L21/46;H01L21/50;H01L21/76 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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