发明名称 |
Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making same |
摘要 |
Generally, the present disclosure is directed to a semiconductor device with DRAM bit lines made from the same material as the gate electrodes in non-memory regions of the device, and methods of making the same. One illustrative method disclosed herein comprises forming a semiconductor device including a memory array and a logic region. The method further comprises forming a buried word line in the memory array and, after forming the buried word line, performing a first common process operation to form at least a portion of a conductive gate electrode in the logic region and to form at least a portion of a conductive bit line in the memory array. |
申请公布号 |
US8609457(B2) |
申请公布日期 |
2013.12.17 |
申请号 |
US201113099692 |
申请日期 |
2011.05.03 |
申请人 |
BAARS PETER;SCHLOESSER TILL;JAKUBOWSKI FRANK;GLOBALFOUNDRIES INC. |
发明人 |
BAARS PETER;SCHLOESSER TILL;JAKUBOWSKI FRANK |
分类号 |
H01L21/00;H01L21/8242 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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