发明名称 |
CHEMICALLY AMPLIFIED RESIST COMPOSITION, RESIST FILM USING THE SAME, MASK BLANKS, AND RESIST PATTERN FORMING METHOD |
摘要 |
<p>A chemically amplified resist composition of the present invention comprises a structure unit (a) which generates acid by being decomposed by the emission of radiation or active rays, and a compound (α) including a phenolic hydroxyl group and an acidic cross-linking group. The compound including a phenolic hydroxyl group and an acidic cross-linking group contains at least one group selected from the group consisting of a hydroxymethyl group and an alkoxymethyl group as the acidic cross-linking group.</p> |
申请公布号 |
KR20130137078(A) |
申请公布日期 |
2013.12.16 |
申请号 |
KR20130046688 |
申请日期 |
2013.04.26 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
TSUCHIMURA TOMOTAKA;TSURUTA TAKUYA |
分类号 |
G03F7/028;G03F7/11;G03F7/26;H01L21/027 |
主分类号 |
G03F7/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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