发明名称 CHEMICALLY AMPLIFIED RESIST COMPOSITION, RESIST FILM USING THE SAME, MASK BLANKS, AND RESIST PATTERN FORMING METHOD
摘要 <p>A chemically amplified resist composition of the present invention comprises a structure unit (a) which generates acid by being decomposed by the emission of radiation or active rays, and a compound (α) including a phenolic hydroxyl group and an acidic cross-linking group. The compound including a phenolic hydroxyl group and an acidic cross-linking group contains at least one group selected from the group consisting of a hydroxymethyl group and an alkoxymethyl group as the acidic cross-linking group.</p>
申请公布号 KR20130137078(A) 申请公布日期 2013.12.16
申请号 KR20130046688 申请日期 2013.04.26
申请人 FUJIFILM CORPORATION 发明人 TSUCHIMURA TOMOTAKA;TSURUTA TAKUYA
分类号 G03F7/028;G03F7/11;G03F7/26;H01L21/027 主分类号 G03F7/028
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