| 摘要 |
This plasma processing apparatus is provided with: an anode electrode; a cathode electrode having a through hole that is provided with openings in the surfaces that face the anode electrode; a gas supply apparatus, which introduces a process gas to between the anode electrode and the cathode electrode; and an alternating current power supply, which supplies alternating current power to between the anode electrode and the cathode electrode, and brings the process gas into the plasma state at an area between the anode electrode and the cathode electrode. |
