发明名称 Magnetron sputtering apparatus
摘要 PURPOSE: A magnetron sputtering apparatus is provided to increase the use efficiency of a target by changing the size and arrangement of a magnet to control magnetic flux. CONSTITUTION: A target (140) supplies a deposition material to a substrate which is located in the deposition location of a chamber (110). A magnet unit (170) is arranged on one side of the target and generates magnetic flux for deposition between the substrate and the magnetic unit. The magnet unit includes a plurality of main magnets (181-183) to generate main magnetic flux and at least one submagnet (191, 192). A substrate transfer support unit (130) is installed in the chamber and supports the substrate to be transferred.
申请公布号 KR101341433(B1) 申请公布日期 2013.12.13
申请号 KR20120041128 申请日期 2012.04.19
申请人 发明人
分类号 H01L21/203 主分类号 H01L21/203
代理机构 代理人
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